features low c ob ,c ob = 2.0 pf (typ). marking : bq, br, bs maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 7 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a dc current gain h fe v ce =6v,i c =1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.4 v transition frequency f t v ce =12v,i c =-2ma,f=100mhz 1 6 0 mhz collector output capacitance c ob v cb =12v,i e =0,f=1mhz 2.0 3.5 pf classification of h fe rank q r s range 120 - 270 180 - 390 270 - 560 marking bq br bs ( npn ) 1. base 2. emitter sot - 23 3. collecto 2SC2412 page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. a,may,2011
110100 10 100 0.1 1 10 100 400 600 800 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 0.1 1 10 100 10 100 0.1 1 10 100 10 100 0.1 1 10 1 10 048121620 0 1 2 3 4 5 0 300 600 900 1200 1 10 100 i c f t ?? common emitter v ce =12v t a =25 collector current i c (ma) transition frequency f t (mhz) 300 0.5 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 300 150 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 6v 500 20 50 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) common emitter t a =25 20ua 18ua 16ua 14ua 12ua 10ua 8ua 6ua collector current i c (ma) collector-emitter voltage v ce (v) v ce ?? i c i b =2ua 4ua 150 150 collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 1 0 0 common emitter v ce =6v 150 page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. typical characteristics 2SC2412 a,may,2011
|
